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NTB90N02, NTP90N02
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
24
?
27
25
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 24 Vdc, V GS = 0 Vdc)
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = $ 20 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.9
?3.8
3.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 3)
R DS(on)
m W
(V GS = 10 Vdc, I D = 90 Adc)
(V GS = 4.5 Vdc, I D = 40 Adc)
(V GS = 10 Vdc, I D = 20 Adc)
(V GS = 4.5 Vdc, I D = 20 Adc)
?
?
?
?
5.0
7.5
5.0
7.5
5.8
9.0
5.8
9.0
Forward Transconductance (Note 3) (V DS = 15 Vdc, I D = 10 Adc)
g FS
?
25
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 20 Vdc, V GS = 0 Vdc,
f = 1 1.0 0 MHz)
C iss
C oss
C rss
?
?
?
2120
900
360
?
?
?
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
Gate Charge
(V DD = 20 Vdc, I D = 20 Adc,
V GS = 4.5 Vdc, R G = 2.5 W )
(V DS = 20 Vdc, I D = 20 Adc,
V GS = 4.5 Vdc) (Note 3)
t d(on)
t r
t d(off)
t f
Q T
Q 1
?
?
?
?
?
?
16
90
28
60
29
8.0
?
?
?
?
?
?
ns
nC
Q 2
?
20
?
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(I S = 2.3 Adc, V GS = 0 Vdc)
V SD
?
0.75
1.0
Vdc
(I S = 40 Adc, V GS = 0 Vdc) (Note 3)
(I S = 2.3 Adc, V GS = 0 Vdc, T J = 150 ° C)
?
?
1.2
0.65
?
?
Reverse Recovery Time
(I S = 2.3 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
t rr
t a
?
?
40
21
?
?
ns
t b
?
18
?
Reverse Recovery Stored Charge
Q RR
?
0.036
?
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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